Description
The CYPG6144CQ combines a 260 mΩ eMode GaN FET with integrated gate drive and protection. Current sensing is built in, so a separate sense resistor is not needed in the power path.
Integration
- Integrated gate drive
- 3.3 V / 5 V / 15 V PWM logic compatible
- Programmable, accurate GaN current sensing
- Built-in turn-on dV/dt and turn-off di/dt optimization
Protection and efficiency
- Over-temperature protection
- Standby 50 µA typ, sleep 10 µA max
- Reliable hard and soft switching
- Zero reverse recovery charge
Package and sustainability
- DPAK-4L with grounded cooling pad
- Low package inductance, low thermal resistance
- RoHS, Pb-free, REACH-compliant
- Up to 40% energy savings vs. silicon solutions
Key Specifications
- ID max (@25 °C)
- 7.9 A
- ID pulse max (10 µs, TJ = 125 °C)
- 7.9 A
- VDS max
- 700 V
- Transient VDS max
- 800 V
- RDS(on) typ (@25 °C)
- 260 mΩ
- RDS(on) max (@25 °C)
- 364 mΩ
- Package
- DPAK-4L
- TJ max
- 150 °C
- VCC range
- 10.5 V to 24 V
- RθJC (junction-to-case)
- 8.5 °C/W
Applications
Built for soft-switching power stages in the low to mid power range.
- AC-DC chargers and adapters
- Wireless power
- LED lighting
- Solar micro-inverters
- TV power
- Server and telecom power
Quasi-resonant flyback
Boost PFC
Ordering Information
| Orderable part | Status | Topology | Package | MSL | Packing | Temperature (TJ) | Storage Temperature (TSTOR) | Order |
|---|---|---|---|---|---|---|---|---|
| CYPG6144CQ01 | Sampling | Isolated | DPAK-4L | 3 | 2,000 / 13" reel | -55 to +150 °C | -55 to +150 °C | Request Samples |
